VERFAHREN ZUR ERZEUGUNG VON SCHICHTEN AUS SILICIUMCARBID
METHOD FOR PRODUCING LAYERS OF SILICON CARBIDE
Patent Application
Priority 2017
SiC SemicWafer. 3C-SiC semiconductor layers for power electronics and intermediate band solar cells. As of 2017 wafers of the 3C-SiC polytype are not commercially available as conventional methods cannot produce them. Moreover, all presently available wafers unavoidably contain nitrogen leading to electric conductivity. Our procedure delivers highly pure SiC without unwanted doping.
Siegmund Greulich-Weber and Ruggero Schleicher-Tappeser (2017): VERFAHREN ZUR ERZEUGUNG VON SCHICHTEN AUS SILICIUMCARBID. Patent application DE102017112756. Patent Family. Priority 09.06.2017, Publication 03.12.2018.